ZVP2106GTC【PDF 1/3 页】MOSFET P-CHAN 60V SOT223

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录539

[1页]2页 3页

SOT223 P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 ? MARCH 96

FEATURES

* 60 Volt V DS

* R DS(on) =5 ?

ZVP2106G

PARTMARKING DETAIL: -

COMPLEMENTARY TYPE: -

ZVP2106

ZVN2106G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T amb =25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T amb =25°C

Operating and Storage Temperature Range

SYMBOL

V DS

I D

I DM

V GS

P tot

T j :T stg

VALUE

-60

-450

-4

± 20

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BV DSS

-60

I D =-1mA, V GS =0V

Gate-Source Threshold

Voltage

V GS(th)

-1.5

-3.5

I D =-1mA, V DS = V GS

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

I GSS

I DSS

I D(on)

-1

-0.5

-100

μ A

V GS = ± 20V, V DS =0V

V DS =-60 V, V GS =0

V DS =-48 V, V GS =0V, T=125°C (2)

V DS =-18 V, V GS =-10V

Static Drain-Source On-State R DS(on)

Resistance (1)

V GS =-10V,I D =-500mA

Forward Transconductance

(1)(2)

Input Capacitance (2)

g fs

C iss

150

100

V DS =-18V,I D =-500mA

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

C oss

C rss

t d(on)

t r

t d(off)

t f

V DS =-18V, V GS =0V, f=1MHz

V DD ≈ -18V, I D =-500mA

(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%

(2) Sample test.

(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator

3 - 426

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式